EM-NANO2025
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Session Details

D8. Silicon LSI Emerging Technologies

[5]Session 5 (D8. Silicon LSI Emerging Technologies)

Fri. Jun 13, 2025 10:45 AM - 12:30 PM JST
Fri. Jun 13, 2025 1:45 AM - 3:30 AM UTC
Main Hall(8th Floor)
Chairs: Takayuki Mori (Kanazawa Inst. of Tech.), Shibun Tsuda (Renesas Electronics Corp.)

10:45 AM - 11:15 AM JST(1:45 AM - 2:15 AM UTC)

[5-01][Invited] Development of ferroelectric field effect transistor designed by nanomaterial engineering

*Tadashi Yamaguchi1 (1. Renesas Electronics Corp. (Japan))
11:15 AM - 11:45 AM JST(2:15 AM - 2:45 AM UTC)

[5-02][Invited] Interface dipole engineering for multi-Vt technology of gate-all-around nanosheet/CFET devices

*Hiroaki Arimura1, Leo Lukose1, Jishnu Ganguly1, Hans Mertens1, Jacopo Franco1, Naoto Horiguchi1 (1. imec (Belgium))
11:45 AM - 12:15 PM JST(2:45 AM - 3:15 AM UTC)

[5-03][Invited] Cryogenic CMOS device technology for scalable quantum computers

*Hiroshi Oka1 (1. AIST (Japan))
12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[5-04]Reduction of back bias effect in cryogenic SOI-MOSFET

*Ryosuke Kobayashi1, Takayuki Mori1, Takahiro Mori2, Hiroshi Oka2, Jiro Ida1 (1. Kanazawa Inst. of Tech. (Japan), 2. AIST (Japan))
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