[Tu-P] Extended Defects | ICSCRM2026

Session Details

Poster SessionTrack 03 Extended Defects

[Tu-P]Extended Defects

Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC

Poster-A(1st Floor)

[Tu-P-21]Multiphoton-excited photoluminescence analysis of micropipes and related defect structures in 4H-SiC substrates

*Hirofumi Hoshida¹, Shota Fujiki¹, Mari Yamamoto¹, Takeshi Mitani², Junji Senzaki² (1. Lasertec Corp. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

[Tu-P-22]Physical Revelation and Analysis of Dislocation Densities in Sub-Micron SmartSiC™ Substrates and Direct Correlation with Donor Bulk Crystals

*Alexis DROUIN¹, Vanessa OROZCO¹, Walter Schwarzenbach¹ (1. SOITEC S.A. (France))

[Tu-P-23]Impact of Buffer Thickness on Bipolar Degradation in SiC Power MOSFETs and Diodes under Transient Surge Current Pulses

*Alexander Brunko¹, Tobias Erlbacher¹, Firas Faisal¹ (1. Nexperia Germany (Germany))

[Tu-P-24]Photoluminescence characterization of Shockley Stacking Faults triggered in high power 4H-SiC devices

*Nicolo Piluso¹, Cristiano Calabretta¹, Fabiana Vento¹, Salvatore Adamo¹, Ketty Bottari¹, Beatrice Carbone¹, Giovanni Maira¹, Enzo Fontana¹, Angela TERRACINA¹, Laura ANOLDO¹, Giuseppe TOSTO¹, Santina BEVILACQUA¹, Marco IACOBUCCI¹, Santi ALESSANDRINO¹, Giuseppe Arena¹, Andrea Severino¹ (1. Indus. - STmicroelectronics (Italy))

[Tu-P-25]Conversion of Substrate Dislocations to Stacking Faults
and Influence of Aluminum Implantation on Stacking Faults

*Nadja Kölbel¹, Birgit Kallinger², Christian Kallinger Kranert², Tobias Erlbacher³, Firas Faisal³, Jörg Schulze^1,2 (1. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany), 2. Fraunhofer IISB (Germany), 3. Nexperia (Germany))

[Tu-P-26]Influence of annealing temperature and orientation of basal plane dislocations on their conversion to threading edge dislocations in a 4H-SiC substrate

*Aoi Okada¹, Chiharu Ota¹, Ryoichi Ohara² (1. Toshiba Corp. (Japan), 2. Toshiba Electronic Devices & Storage Corp. (Japan))

[Tu-P-27]Carrier-induced reduction in basal-plane slip barriers in 4H-SiC

*Hiroki Sakakima¹, Satoshi Izumi¹ (1. Univ. of Tokyo (Japan))

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