[Tu-P] Bulk Growth and Wafer Processing | ICSCRM2026

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Poster SessionTrack 01 Bulk Growth and Wafer Processing

[Tu-P]Bulk Growth and Wafer Processing

Tue. Sep 29, 2026 4:00 PM - 6:00 PM JST
Tue. Sep 29, 2026 7:00 AM - 9:00 AM UTC

Poster-A(1st Floor)

[Tu-P-01]Growth and Characterization of Heavily Nitrogen-Doped 150 mm 4H-SiC Wafers with Resistivity Near 0.01 Ω·cm

*Xueping Xu¹, Ever Velasco¹, Rajan Rengarajan¹ (1. Coherent Corp. (USA))

[Tu-P-02]Enhanced Doping Uniformity and Morphological Stability in 8-inch 4H-SiC Single Crystal Growth via Hot-Zone Structural Modification

*SUHO KIM¹, Jung Gyu Kim¹, Myung Ok Kyun¹, Yeon Suk Jang¹, Kap Ryeol Ku¹, Jung Gon Kim², Mi Seon Park², Won Jae Lee² (1. EINCRYSTAL Co.,Ltd. (Korea), 2. Univ. of Dong-Eui (Korea))

[Tu-P-03]Growth of thick Al-doped 4H-SiC layers using Close Space Physical Vapor Transport Growth

Ole Schneider¹, Cristina Grazzi¹, Lucrezia Tana¹, Mikael Syväjärvi², *Peter J Wellmann¹ (1. Universität Erlangen-Nürnberg (FAU) (Germany), 2. ALMINICA AB, ICM Research Institute (Sweden))

[Tu-P-04]Evaluation of Defect Generation in P-type 4H-SiC PVT Growth under Al–N Co-Doping Conditions

*Kazuma Eto¹, Shigeyuki Kuboya¹, Takeshi Mitani¹, Tomohisa Kato¹ (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan))

[Tu-P-05]Growth of High-quality P-type Substrates by TSSG Method

*Yu Guo¹, Chunjun Liu¹, Yuxin Li¹, Xu Sui¹, Yue Shi¹, Yuhui liu¹, Tonghua Peng¹, Jian Yang¹ (1. TanKeBlue Semiconductor Co., Ltd (China))

[Tu-P-06]Cross-Sectional Analysis of Macrostep Evolution Leading to Solvent Inclusion Formation in Al-Doped Solution-Grown 4H-SiC

Takahiro Ito¹, Kentaro Kutsukake¹, Shunta Harada¹, *TORU UJIHARA¹ (1. Nagoya Univ. (Japan))

[Tu-P-07]Optimization of temperature distribution for suppressing SiC inclusions during SiC solution growth

*Kazuki Shibayama¹, Takeshi Mitani², Tsukasa Washio¹, Daisuke Tahara¹, Shigeyuki Kuboya², Kazuma Eto², Tomohisa Kato² (1. Sumitomo Metal Mining Co., Ltd. (Japan), 2. National Institute of Advanced Industrial Science and Technology (Japan))

[Tu-P-08]Thermodynamic Evaluation of the Al-C-Cr-Si System for SiC Solution Growth

*Kazuhisa Kurashige¹, Yoshihisa Abe¹, Akihisa Kawabe¹, Junya Osada¹, Hideo Nakanishi¹, Hiroyuki Ishibashi¹, Toru Ujihara² (1. OXIDE Power Crystal Corporation (Japan), 2. Nagoya University (Japan))

[Tu-P-09]Carbon/Graphite: The Hot Zone Hero

*Joe Abrahamson Abrahamson¹, Fernando Vallejos-Burgos¹, Ievgen Izvarin¹, Patrick Rondomanski¹, Linsea Foster¹, Mathias Yost^1,2, Thomas Connolly¹, Anirban Phukan², Randy Vander Wal², Dave Fecko², Adri van Duin², Josh Robinson² (1. Morgan Advanced Materials (USA), 2. Penn State University (USA))

[Tu-P-10]High Temperature Emissivity Measurement Of Metal Carbide Coating

Bowen Dong¹, Creighton Tomek¹, Jeffrey Lennartz¹, *Wei Fan¹, Jon Leist¹ (1. Momentive Technologies (USA))

[Tu-P-12]TEM Analysis of Process-Induced Subsurface Damage in β-Ga₂O₃ (001) Substrates for Kerf-Loss Reduction

*Taekyung Lee¹, Hanchul Cho¹ (1. Korea Institute of Industrial Technology (Korea))

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