Session Details
[AMD5]Oxide TFT (3)
Fri. Dec 5, 2025 9:00 AM - 10:20 AM JST
Fri. Dec 5, 2025 12:00 AM - 1:20 AM UTC
Fri. Dec 5, 2025 12:00 AM - 1:20 AM UTC
Cosmos 1
Chair: Susumu Horita (JAIST)
Co-Chair: Yujiro Takeda (Applied Materials Taiwan)
Co-Chair: Yujiro Takeda (Applied Materials Taiwan)
[1(Invited)]High-Performance Single-Crystal In2O3 FET Toward 3D VLSI Circuits(20min.)
*Satoru Saito1, Tatsuya Onuki1, Shoki Miyata1, Kazuma Furutani1, Yuji Egi1, Yoshinori Ando1, Motomu Kurata1, Takanori Matsuzaki1, Satoshi Seo1, Shunpei Yamazaki (1. Semiconductor Energy Laboratory Co. Ltd. (Japan))
[2(Invited)]Atomic Layer Deposited Polycrystalline Ga-doped In2O3 Nanosheet for Field-Effect Transistor Applications(20min.)
*Takanori Takahashi1, Takuya Hoshii2, Yuki Tsuruma3, Misa Sunagawa3, Shigekazu Tomai3, Jongho Park2, Hiroki Tamamoto2, Kuniyuki Kakushima2, Yukiharu Uraoka1 (1. Nara Institute of Science and Technology (Japan), 2. Institute of Science Tokyo (Japan), 3. Idemitsu Kosan Co., Ltd. (Japan))
[3(Invited)]Vertical Channel Oxide TFTs for High-Resolution Displays(20min.)
*Chi-Sun Hwang1, Yong-Hae Kim1, Jae-Eun Pi1, Jong-Heon Yang1, Yong-Duck Kim1 (1. ETRI (Korea))
[4]Hydrogen-Resistant IGZO TFT with Nitrogen-Engineered SiO2 Gate Insulator via PEALD(20min.)
*Juwon Kim1, Ji Yeon Park1, Seong-A Shin1, Tae Heon Kim1, Jin-Seong Park1 (1. Hanyang University (Korea))