Best Paper Award

・Atsushi Tamura (The University of Tokyo): Impact of Substrate-Surface Oxidation Treatment and Post-Deposition Annealing on β-Ga₂O₃ (001) MOS Interfaces with ALD-Deposited Al₂O₃ and SiO₂

Young Researcher Award

Oral presentation

・Haoming Che (The University of Tokyo): Impacts of oxidant selection and oxidant exposure time in ALD growth on crystallization of as-deposited HZO thin films

・Hiroyuki Matsukawa (The University of Tokyo): C–V characteristics of ferroelectric Hf_1-xZr_xO₂: Impact of voltage sweep speed

・Shundong Hu (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing): InGeO:F Channel Engineering by Fluorination Based on a GeO₂ Buffer Layer with Enhanced Mobility and Negative-Bias Stability

 

Poster presentation

・Kenta Ogawa (Meiji University): Effects of Interface Formation Process on Tunneling Current Components of N-type Ti_0.3Zn_0.7O_1.3/P-type Si Stack Structure

・Shota Torimoto (Nagoya University): New opportunity of GeSiSn/GeSn heterostructure for HEMT application

・Yoshiharu Kirihara (Tokyo City University): Estimation of Charge Trap Positions in Silicon Nitride Films Using Voltage-applied Hard X-ray Photoelectron Spectroscopy