Session Details
[P]P1~P8 Materials Physics
Wed. Sep 23, 2026 1:30 PM - 3:00 PM JST
Wed. Sep 23, 2026 4:30 AM - 6:00 AM UTC
Wed. Sep 23, 2026 4:30 AM - 6:00 AM UTC
Poster Session Room(Small Gymnasium)
[P2]高い電気抵抗率を有する高シリコン濃度の鉄ボロンシリコン系アモルファス合金の軟磁気特性
○tomotaka Fujita1, Teruo Bitoh1 (1. Akita Prefectural University)
[P3]Magnetoresistance effect and magnetostrictive properties of FexMnGay alloy
○Chihiro Saito1, Toshiyuki Shima1, Masaaki Doi1 (1. Tohoku Gakuin Univ)
[P4]Effects of Se and Te substitutions on magnetic properties of (Cr,Fe)S chalcogenide compounds
○Tomoharu Yoshino1,2, Yin Weida1,2, Masato Miyakawa2, Rie Umetsu2 (1. Grad. Sch. Eng. Tohoku Univ., 2. IMR. Tohoku Univ.)
[P5]Crystallization of Ge thin films by MIC method and evaluation of their oxidation behavior
○Shigeto Takagi1 (1. Shibaura Inst. of Technol.)
[P6]Electrical resistance change behavior of Zn-Te-base thinfilms during heating and cooling processes
○Kokoro Sawada1, Yi Shuang2,3, Daisuke Ando1, Yuji Sutou1,3 (1. Tohoku Univ. (Eng.), 2. Tohoku Univ. (FRIS), 3. Tohoku Univ. (AIMR))
[P7]Low-Temperature Crystallization and Electrical Properties of Ge Thin Films via MIC Using Ag and AgSb
○Shunsuke Ochi1 (1. Shibaura Inst. of Technol.)
[P8]High-pressure synthesis and phase stability of novel nickel silicide
○Ai Ichinohe1, Ken Niwa2, Takuya Sasaki2, Masashi Hasegawa2 (1. Nagoya Univ. , 2. Nagoya Univ.)