[19a-A202-1~9] 17.3 Layered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-A202-7] Effects of step structure of GaAs(001) offcut substrate on the epitaxial orientation of GaSe/In₂Se₃ films

〇Junya Fujita¹, Kojima Nobuaki¹, Oshita Yoshio¹ (1.Toyota Tech Inst.)

Keywords:

layed material

The use of (111) micro-tilted substrates and the insertion of an In₂Se₃ layer at the interface with the substrate are effective for step-flow growth of GaSe with the step edge aligned in one direction, but it is not clear how the step edge structure of the substrate and the presence of an In₂Se₃ layer affect GaSe growth, and However, it is not clear how the step-edge structure of the substrate and the presence of the In₂Se₃ layer affect the growth of GaSe. Therefore, we discuss the role of the In₂Se₃ layer in the step-flow growth of GaSe by using two types of GaAs(001) slightly tilted substrates with different step-edge structures and the effects of the atomic species at the step edge of the substrate and the In₂Se₃ layer on the epitaxial orientation of GaSe