The 84th JSAP Autumn Meeting 2023
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Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[19a-A202-1~9]17.3 Layered materials

Tue. Sep 19, 2023 9:00 AM - 11:30 AM JST
Tue. Sep 19, 2023 12:00 AM - 2:30 AM UTC
A202 (KJ Hall)
Hitoshi Wakabayashi(Tokyo Tech)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[19a-A202-1]Effects of Ge thin film deposition and annealing on segregated germanene

〇Seiya Suzuki1, Tomo-o Terasawa1, Daiki Katsube2, Masahiro Yano1, Yasutaka Tsuda1, Junji Yuhara3, Akitaka Yoshigoe1, Hidehito Asaoka1 (1.JAEA, 2.RIKEN, 3.Nagoya Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[19a-A202-2]In-situ Raman spectroscopy of germanene growth process on Ag thin film

〇Tomoo Terasawa1,2, Seiya Suzuki1, Daiki Katsube3, Masahiro Yano1, Yasutaka Tsuda1, Akitaka Yoshigoe1, Hidehito Asaoka1 (1.JAEA, 2.IIS, Univ. of Tokyo, 3.RIKEN)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-A202-3]Growth and characterization of S-doped Bi2Se3crystals by Bridgeman method

〇(M1)Souma Takefuta1, Seiya Yokokura2, Toshihiro Shimada2 (1.CSE Hokkaido Univ., 2.Eng Hokkaido Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-A202-4]Tuning conditions for CVD synthesis of h-BN nanosheets on Si substrates

〇(M1)Tomohiro Okamoto1, Toshiya Okabe1, Kentaro Watanabe1,2 (1.Shinshu Univ., 2.Shinshu Univ. IFES)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[19a-A202-5]Epitaxial growth of TaS2 thin films by chemical vapor deposition

〇Takashi Yanase1, Miu Ebashi1, Toshihiro Shimada2 (1.Toho Univ., 2.Hokkaido Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-A202-6]Sulfurization process during WS2 film synthesis using simple thermal CVD

〇Kazushi Sekiya2, Shunta Kitazawa1, Fumitaka Ohashi1, Jha Himanshu1, Tetsuji Kume1,2 (1.Gifu Univ., 2.Grad. Sch. of Gifu Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-A202-7]Effects of step structure of GaAs(001) offcut substrate on the epitaxial orientation of GaSe/In2Se3 films

〇Junya Fujita1, Kojima Nobuaki1, Oshita Yoshio1 (1.Toyota Tech Inst.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-A202-8]Highly-aligned epitaxial growth of wafer-scale monolayer MoS2 by MOCVD

〇Yoshiki Sakuma1, Xu Yang1, Yuki Ono2, Shisheng Li1, Takanobu Hiroto1, Jun Nara1, Michio Ikezawa3, Takashi Matsumoto2 (1.NIMS, 2.Tokyo Electron Technology Solutions Ltd., 3.Tsukuba Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-A202-9]Development of Rapid synthesis system of MAX Phase nanolayered compounds

Daisuke Nishine1, Ryosuke Numata1, Riku Sawamura1, Taro Shimomura1, Mahito Yamamoto1, 〇Mitsuru Inada1 (1.Kansai Univ.)
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