[19a-A301-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-A301-5] Reduction of Schottky barrier height for Mo/n-Si junctions by inserting MoSi_n

〇Naoya Okada¹, Noriyuki Uchida¹, Toshihiko Kanayama¹ (1.AIST)

Keywords:

contact,Molybdenum,silicide

This work reports that the electron Schottky barrier height was reduced to 0.48 eV at Mo/n-Si junctions by inserting a semimetal MoSi_n film. The SBH modulation effect was kept even after annealing up to at 700 °C. Thus, the MoSi_n film is a promising contact material at source/drain with the Mo electrode for the advanced CMOS transistors.