The 84th JSAP Autumn Meeting 2023
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Session Details

Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[19a-A301-1~10]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Tue. Sep 19, 2023 9:00 AM - 11:45 AM JST
Tue. Sep 19, 2023 12:00 AM - 2:45 AM UTC
A301 (KJ Hall)
Tatsuya Okada(Univ. of the Ryukyus), Yan Wu(Tokyo Inst. of Tech.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[19a-A301-1][Young Scientist Presentation Award Speech] Atomic-Scale and Real-Time Observation of Solid-Phase Epitaxial Growth in Thin Silicon Film using in situ Heating High-Resolution TEM

〇Manabu Tezura1, Takanori Asano1, Riichiro Takaishi1, Mitsuhiro Tomita1, Masumi Saitoh1, Hiroki Tanaka1 (1.Kioxia Corp.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A301-2]Nucleation control for low defects and high mobility in polycrystalline GeSn thin films

〇Shintaro Maeda1, Takamitsu Ishiyama1, Kenta Moto2, Keisuke Yamamoto2, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba, 2.Kyushu Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-A301-3]Explosive Crystallization of Amorphous Ge Films on Substrates by Irradiation with a Low-Energy Electron Beam

〇Hibiki Sakamoto1, Ryusuke Nakamura1, Junichi Yanagisawa1, Taizoh Sadoh2 (1.Univ. of Shiga Pref., 2.Kyushu Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-A301-4]Formation of a-SiC thin films using vinylsilane and Tri-methul-aluminum

〇Yuuki Tsuchiizu1, Kouki Ono2, Kennichi Uehara3, Shigeo Yasuhara3, Wakana Takeuchi1 (1.Aichi Inst. of Tech., 2.Nagoya Univ. Eng., 3.Japan advanced chemicals Ltd.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-A301-5]Reduction of Schottky barrier height for Mo/n-Si junctions by inserting MoSin

〇Naoya Okada1, Noriyuki Uchida1, Toshihiko Kanayama1 (1.AIST)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-A301-6]Linear agglomeration during the CW-laser lateral crystallization of Si films (2)

〇Nobuo Sasaki1,2, Satoshi Takayama2, Rikuto Sasai2, Yukiharu Uraoka2 (1.Sasaki Consulting, 2.NAIST)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-A301-7]Linear agglomeration during the CW-laser lateral-crystallization of Si films (3)

〇Rikuto Sasai1, Nobuo Sasaki1,2, Satoshi Takayama1, Yukiharu Uraoka1 (1.NAIST, 2.Sasaki Consulting)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-A301-8]Infinite growth of single crystal (001) strip in Ge films by micro chevron laser scanning

〇WENCHANG YEH1, Takashi Osato1 (1.Shimane Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-A301-9]Crystallization of a-Si Films Deposited by RF Sputtering using Blue Direct Diode Laser (Part 4)

〇Tatsuya Okada1, Takashi Noguchi1, Mitsuoki Hishida2, Kentaro Miyano2, Naohiko Kobata2, Masaki Nobuoka2 (1.Univ. Ryukyus, 2.Panasonic Connect)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[19a-A301-10]Ultra-high concentration p+n junctions by excimer laser doping

〇ren aoki1, Keita Katayama1, Daisuke Nakamura1, Hisato Yabuta1, Hiroshi Ikenoue1, Taizoh Sadoh1 (1.Kyushu Univ.)
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