[19a-A302-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-4] High-speed growth of high-purity β-Ga₂O₃ thick films on 2-inch substrates by hot-wall metalorganic vapor phase epitaxy

〇Junya Yoshinaga¹, Guanxi Piao¹, Kazutada Ikenaga^1,2, Haruka Tozato², Takahito Okuyama², Ken Goto², Yoshinao Kumagai² (1.TAIYO NIPPON SANSO, 2.Tokyo Univ. of Agric. and Tech.)

Keywords:

Ga2O3,Epitaxial growth,MOVPE

In this study, high-speed growth of high-purity β-Ga₂O₃ thick films by MOVPE using TMGa as a Ga precursor was investigated. The growth rate increased linearly with increasing TMGa supply rate, and a high growth rate of about 14 μm/h was achieved. The incorporation of carbon impurities derived from TMGa could be reduced by optimizing the growth conditions.