The 84th JSAP Autumn Meeting 2023
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-A302-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 19, 2023 9:00 AM - 11:45 AM JST
Tue. Sep 19, 2023 12:00 AM - 2:45 AM UTC
A302 (KJ Hall)
Takeyoshi Onuma(Kogakuin Univ.), Takanori Takahashi(NAIST)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[19a-A302-1]Electrical properties of single-crystal p-Cu2O/n-Ga2O3 heterojunction diodes

〇Yun Jia1, Sora Sato1, Aboulaye Traore1, Muhammad Monirul Islam1, Hironori Okumura1, Takeaki Sakurai1 (1.Univ. of Tsukuba)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-2]Cross-Sectional STEM Observation of Polycrystalline Defects in (011) HVPE-grown β-Ga2O3 Schottky Barrier Diodes

〇(M1)Yuto Otsubo1, Sayleap Sdoeung1, Kohei Sasaki2, Akito Kuramata2, Makoto Kasu1 (1.Saga Univ., 2.Novel Crystal Technology, Inc.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-3]Epitaxial growth of β-(ScxGa1−x)2O3 thin films with in-plane compressive strain

〇Kazuki koreishi1, Takuto Soma1, Akira Ohtomo1 (1.Tokyo Tech., Dept. Chem. Sci. Eng.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-4]High-speed growth of high-purity β-Ga2O3 thick films on 2-inch substrates by hot-wall metalorganic vapor phase epitaxy

〇Junya Yoshinaga1, Guanxi Piao1, Kazutada Ikenaga1,2, Haruka Tozato2, Takahito Okuyama2, Ken Goto2, Yoshinao Kumagai2 (1.TAIYO NIPPON SANSO, 2.Tokyo Univ. of Agric. and Tech.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[19a-A302-5]Observation of the stacking fault associated with partial dislocations in edge-defined film-fed grown (001) β-Ga2O3 characterized by synchrotron X-ray topography

〇(D)Sayleap Sdoeung1, Yuto Ostubo1, Kohei Sasaki2, Chia-Hung Lin2, Akito Kuramata2, Makoto Kasu1 (1.Saga Univ., 2.Novel Crystal Technology, Inc.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-6]Electrical conduction of Ge-doped α-Ga2O3 film and its application to Schottky barrier diode

〇Takeru Wakamatsu1, Yuki Isobe1, Hitoshi Takane1, Kentaro Kaneko1,2, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Ritsumeikan Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-7]Homoepitaxial growth of Si-doped β-Ga2O3 thin films by mist CVD

〇Shoma Hosaka1, Hiroyuki Nishinaka1, Temma Ogawa1, Hiroki Miyake2, Masahiro Yoshimoto1 (1.Kyoto Inst. Tech., 2.MIRISE)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-8]Nb-Doped Anatase TiO2 Thin Films Prepared from Aqueous Solutions

〇Rento Naito1, Megumi Ariga1, Kaede Makiuchi1, Tomohito Sudare2, Ryo Nakayama2, Ryota Shimizu2, Kentaro Kaneko3, Yasushi Sato4, Taro Hitosugi2, Naoomi Yamada1 (1.Chubu Univ., 2.Univ. Tokyo, 3.Ritsumeikan Univ., 4.Okayama Univ. Sci.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-9]Thin film fabrication of rutile-GeO2 by solid-phase epitaxy

〇Yo Nagashima1, Daichi Oka2, Yasushi Hirose2 (1.Univ. of Tokyo, 2.Tokyo Metropolitan Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-10]Electron transport properties of B+-implanted amorphous-InGaZnSnO film

〇Keisuke Yasuta1, Yuya Yamane1, Toshimasa Ui1, Toshihiko Sakai2, Masaki Fujiwara2, Daisuke Azuma2, Yasunori Andoh2, Junichi Tatemichi1 (1.Nissin Ion Equipment Co., Ltd., 2.Nissin Electric Co., Ltd.)
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