[19a-A302-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-7] Homoepitaxial growth of Si-doped β-Ga₂O₃ thin films by mist CVD

〇Shoma Hosaka¹, Hiroyuki Nishinaka¹, Temma Ogawa¹, Hiroki Miyake², Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech., 2.MIRISE)

Keywords:

Ga2O3,mist CVD

In this work, we demonstrated Si-doped homoepitaxial β-Ga₂O₃ thin films by mist CVD. The samples indicated very smooth surfaces and carrier concentration of the samples were contollable in the range of 10¹⁸~10²⁰cm^-3 by Si density in precursor water. Especially in larger carrier concentration more than 10²⁰cm^-3, the sample indicated high mobility more than 60cm²/Vs, which revealed the priority of Si dopant against other group Ⅳ dopants in mist CVD.