[19a-A302-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A302-9] Thin film fabrication of rutile-GeO₂ by solid-phase epitaxy

〇Yo Nagashima¹, Daichi Oka², Yasushi Hirose² (1.Univ. of Tokyo, 2.Tokyo Metropolitan Univ.)

Keywords:

Germanium oxide,Solid-phase epitaxy

Rutile-GeO₂ is a novel material with band gap about 4.7 eV and predicted potential for p/n bipolar doping. This study attempted to grow a rutile-GeO₂ single crystaline thin film by solid-phase epitaxy of a precursor amorphous film deposited on a low-temperature substrate by heat treatment.