Presentation Information
[19a-B101-4]Theoretical analysis of TMI degradation and reaction pathways in InN MOVPE growth
〇(M2)Yuya Nagashima1, Hirotaka Watanabe2, Syugo Nitta2, Akira Kusaba3, Yoshihiro Kangawa3, Kenji Shiraishi1,2 (1.Grad School of Eng., Nagoya Univ., 2.IMass, Nagoya Univ., 3.RIAM, Kyusyu Univ.)
Keywords:
III-V semiconductor,MOVPE