Session Details

[19a-B101-1~7]15.4 III-V-group nitride crystals

Tue. Sep 19, 2023 10:15 AM - 12:00 PM JST
Tue. Sep 19, 2023 1:15 AM - 3:00 AM UTC
B101 (Civic Auditorium)
Takahiro Kawamura(Mie Univ.), Masato Oda(Wakayama Univ.)

[19a-B101-1]Relation between Equilibrium and Kinetic Segregation Coefficients in III-V Dilute Semiconductor Alloys

〇Kazuhiro Mochizuki1, Hiroshi Ohta1, Tomoyoshi Mishima1 (1.Hosei Univ.)

[19a-B101-2]Analysis of Substrate Misorientation Dependences of Alloy Compositions in MOVPE Grown c-Plane Nitride Semiconductors Based on BCF Theory and Kink Segregation Model

〇Kazuhiro Mochizuki1, Hiroshi Ohta1, Tomoyoshi Mishima1 (1.Hosei Univ.)

[19a-B101-3]Theoretical Analysis of Trimethylgallium Decomposition Process by Automated Reaction Path Search Method

〇Kanami Sugiyama1, Akira Kusaba2 (1.Kyoto Univ., 2.Kyushu Univ.)

[19a-B101-4]Theoretical analysis of TMI degradation and reaction pathways in InN MOVPE growth

〇(M2)Yuya Nagashima1, Hirotaka Watanabe2, Syugo Nitta2, Akira Kusaba3, Yoshihiro Kangawa3, Kenji Shiraishi1,2 (1.Grad School of Eng., Nagoya Univ., 2.IMass, Nagoya Univ., 3.RIAM, Kyusyu Univ.)

[19a-B101-5]Thermal Interaction between exitons in III-Nitride Semiconductors

Kadono Ayami1, 〇Masato Oda1 (1.Wakayama Univ.)

[19a-B101-6]Theoretical analysis of oxygen adsorption behavior on polar GaN surfaces

〇Toru Akiyama1, Takahiro Kawamura1 (1.Mie Univ.)

[19a-B101-7]Electronic States at the Interface of β-Nb2N/AlN Superlattices

〇Takahiro Kawamura1, Toru Akiyama1, Atsushi Kobayashi2 (1.Mie Univ., 2.Tokyo Univ. Science)