[19a-B201-1~9] 15.7 Crystal characterization, impurities and crystal defects

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[19a-B201-1] Analysis of dislocation cluster generation behavior in multicrystalline silicon

〇(M1)Kazuma Torii¹, Takuto Kojima^2,4, Kentaro Kutsukake³, Hiroaki Kudo², Noritaka Usam¹ (1.Grad. Eng. Nagoya Univ., 2.Grad. Info. Nagoya Univ., 3.AIP RIKEN, 4.AIST)

Keywords:

multicrystalline silicon,dislocation cluster,twin