[19a-B201-1~9] 15.7 Crystal characterization, impurities and crystal defects

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[19a-B201-2] Dislocation density analysis of high-index Ga₂O₃ grown by vertical Bridgman method

〇Koichi Kakimoto¹, Isao Takahashi¹, Taketoshi Tomida¹, Kei Kamada^1,2, Vladimir Kochurikhin², Satoshi Nakano³, Yongzhao Yao⁴, Yukari ISHIKAWA⁴, Akira Yoshikawa^1,2,5 (1.NICHe, Tohoku Univ., 2.C & A, 3.RIAM, Kyushu Univ., 4.FCC, 5.IMR, Tohoku Univ.)

Keywords:

semiconductor,Ga2O3,dislocation

We carried out numerical analysis of dislocation density in Ga₂O₃ grown by Vertical Bridgman method. Orientation of the crystal were set to [010], [001], [-201], and [204]. The dislocation density in the crystals grown in [001] and [-201] directions was smaller than that grown in [010] and [-204] direction.