[19a-B201-1~9] 15.7 Crystal characterization, impurities and crystal defects

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-B201-8] Experimental Study on Defect Behavior during Crystal Growth of Phosphorus Heavily Doped Cz-Si

〇Masataka Hourai¹, Yasuhito Narushima², Koutaro Koga², Kazuhisa Torigoe¹, Hiroshi Horie¹, Toshiaki Ono¹, Naoya Nonaka¹, Koji Sueoka³ (1.SUMCO Corp., 2.SUMCO TECHXIV Corp., 3.Okayama Pref. Univ.)

Keywords:

Czochralski Silicon,Phosphorus,Crystal Defect

Defect behavior in heavily P-doped P:Cz-Si crystals was experimentally studied. P:Cz-Si crystals of 0.6 mΩcm were grown, and defects in as-grown and annealed wafers were evaluated by TEM and HAXPES. In the middle of the crystals, complex dislocations of several hundred nm in size were observed, which were decorated by several atomic % of P. It is suggested that in P:Cz-Si crystals grown with long residence time below 600°C, supersaturated substituted P is converted to P-V clusters, and the interstitial Si generated at the same time is absorbed by the micro-dislocation loops, resulting in defect growth and complication.