[19p-A202-8~15] 17.3 Layered materials

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A202-8] Epitaxial Growth of MoS₂ on Al₂O₃ by Reactive Sputtering

〇(D)Myeongok Kim^1,2, Yoshitaka Okada^1,2 (1.Eng. UTokyo, 2.RCAST UTokyo)

Keywords:

Reactive sputtering,MoS2,Epitaxial growth

Reactive sputtering is an industry-friendly bottom-up growth method that can control the flux of each precursor. The ability to control each precursor flux is critical for the growth of device quality MoS₂. In this research, we investigate the epitaxial growth of multi-layer MoS₂ on Al₂O₃ by reactive sputtering. It is found that reducing the rotational symmetry of the substrate, either by adding step-edges on (0001) c plane or using two-fold symmetry plane, (10-10) M plane, is effective in improving the epitaxial growth of MoS₂ with aligned domains, especially under high S/Mo flux ratio condition. It can be assumed that formation energy degeneracy among R0^o, R30^o, R60^o state of MoS₂ on c-Al₂O₃ can be broken by choosing appropriate substrate in reactive sputtering as it has been reported in other bottom-up growth methods. Improved crystallinity can be attributed to seamless stitching of unidirectional domains.