Session Details

[19p-A202-8~15]17.3 Layered materials

Tue. Sep 19, 2023 4:00 PM - 6:00 PM JST
Tue. Sep 19, 2023 7:00 AM - 9:00 AM UTC
A202 (KJ Hall)
Hiroki Hibino(Kwansei Gakuin Univ.)

[19p-A202-8]Epitaxial Growth of MoS2 on Al2O3 by Reactive Sputtering

〇(D)Myeongok Kim1,2, Yoshitaka Okada1,2 (1.Eng. UTokyo, 2.RCAST UTokyo)

[19p-A202-9]Crystal phase change mechanism of InxSey grown by MOCVD

〇Yukihiro Endo1, Yoshiaki Sekine1, Yoshitaka Taniyasu1 (1.NTT Basic Res. Labs.)

[19p-A202-10]Optical Properties of Tungsten Disulfide Nanoribbons grown on Tungsten Oxide Nanowires

〇Hiroo Suzuki1, Yasumitsu Miyata2, Yasuhiko Hayashi1 (1.Okayama Univ., 2.Tokyo Metropolitan Univ.)

[19p-A202-11]Heteroepitaxial growth of MAPbI3 nanorods on large area monolayer WS2

〇Kosei Tsutsumi1, Hytham Elbohy1, Takeshi Nishikawa1, Yasuhiko Hayashi1, Hiroo Suzuki1 (1.Okayama Univ.)

[19p-A202-12]Direct measurement of surface reactivity of Janus TMD by in-situ monitoring plasma atomic functionalization

〇Hiroshi Nakajo1,2, Soma Aoki1, Toshiaki Kato1 (1.Tohoku Univ., 2.KOUSAI ELECTRIC Corp.)

[19p-A202-13]Sputtering Temperature Dependence of WS2 Film in Sulfur Vapor Annealing

〇(B)Soma Ito1, Shinya Imai1, Naoki Matsunaga1, Keita Kurohara1, Hitoshi Wakabayashi1 (1.Tokyo Tech)

[19p-A202-14]HfS2 Film Formation by RF Magnetron Sputtering using Powder HfS2 Target

〇Taichi Ishikawa1, Yukihito Nishi1, Hitoshi Wakabayashi2, Ryo Yokogawa1,3, Atsushi Ogura1,3 (1.Meiji Univ., 2.Tokyo Tech, 3.Meiji Renewable Laboratory)

[19p-A202-15]ZrxHf1-xS2 Alloy Film Formation by RF Magnetron Sputtering Co-deposition using Powder HfS2 Target

〇Yukihito Nishi1, Taichi Ishikawa1, Hitoshi Wakabayashi2, Ryo Yokogawa1,3, Atsushi Ogura1,3 (1.Meiji Univ., 2.Tokyo Tech, 3.MREL)