[19p-A202-8~15] 17.3 Layered materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A202-9] Crystal phase change mechanism of In_xSe_y grown by MOCVD

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

Keywords:

III-VI semiconductor,metalorganic chemical vapor deposition,Indium Selenide

We established a phase-controlled growth technique of In_xSe_y using metalorganic chemical vapor deposition, summarized as a phase diagram. The crystal phases changed from InSe, β-In₂Se₃ to γ-In₂Se₃ increasing the growth temperature, which follows the thermal stabilities. The temperature at the crystal phase change depends on the Se/In source ratio. This dependence at the phase change from InSe to β-In₂Se₃ was analyzed by a thermal activation model. As a result, we figured out that the phase change can be explained by the crystal composition change due to the decomposition reaction processes of the selenium source.