[19p-A302-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-A302-1] Degradation Analysis under Negative Bias Stress and Light Irradiation in Top-gate In-Ga-Zn-O Thin Film Transistors

〇Yujiro Takeda¹, Takanori Takahashi¹, Ryoko Miyanaga¹, Juan Paolo Bermundo¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:

Oxide Semiconductor,Thin Film Transistor