The 84th JSAP Autumn Meeting 2023
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-A302-1~16]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 19, 2023 1:00 PM - 5:15 PM JST
Tue. Sep 19, 2023 4:00 AM - 8:15 AM UTC
A302 (KJ Hall)
Keisuke Ide(Tokyo Tech), Magari Yusaku(Hokkaido Univ.)
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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-A302-1]Degradation Analysis under Negative Bias Stress and Light Irradiation in Top-gate In-Ga-Zn-O Thin Film Transistors

〇Yujiro Takeda1, Takanori Takahashi1, Ryoko Miyanaga1, Juan Paolo Bermundo1, Yukiharu Uraoka1 (1.NAIST)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-A302-2]Electrical properties of crystalline In-Ga-O films derived by atomic layer deposition

〇Hikaru Hoshikawa1, Takanori Takahashi1, Mutsunori Uenuma1, Hidenori Kawanishi1, Yukiharu Uraoka1 (1.NAIST)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-A302-3]Impact on mechanical flexibility of H-doped In2O3-based amorphous transparent conductive films

〇(M1)Kanta Kibishi1, Shinri Yamadera1, Tsubasa Kobayashi1, Ichiro Takano1, Shinya Aikawa1 (1.kogakuin Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[19p-A302-4]Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In2O3:H TFTs

〇Yusaku Magari1, Prashant Ghediya1, Yuqiao Zhang2, Yasutaka Matsuo1, Mamoru Furuta3, Hiromichi Ohta1 (1.RIES-Hokkaido Univ., 2.Jiangsu Univ., 3.Kochi Univ. Tech.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[19p-A302-5]Negative Bias Stability Improvement of In2O3:H TFTs by Yttria Passivation

〇(PC)Prashant Ghediya1, Yusaku Magari1, Yuqiao Zhang2, Yasutaka Matsuo1, Hiromichi Ohta1 (1.RIES-Hokkaido Univ., 2.IQST-Jiangsu Univ.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-A302-6]Effect of deposition pressure and SPC ambient on electrical properties of poly-InOx:H

〇Satoru Sonezaki1, Mamoru Furuta1,2 (1.Kochi Univ. of Tech, 2.Kochi University of Tech.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-A302-7]Rapid Thermal Crystallization of H-doped InOx for Thin Film Transistors

〇XIAOQIAN WANG1, Yusaku Magari3, Mamoru Furuta1,2 (1.Kochi Univ. of Tech., 2.Kochi University of Tech., 3.Hokkaido Univ.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-A302-8]Effect of channel thickness on carrier conduction of In2O3 thin-film transistors

〇Yuuto Kawato1, Takanori Takahashi1, Mutsunori Uenuma1, Yukiharu Uraoka1 (1.NAIST)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-A302-9]O2 plasma treatment on B-doped In2O3TFT fabricated at room temperature

〇Shinri Yamadera1, Kanta Kibishi1, Ayumu Nodera1, Shinya Aikawa1 (1.Kogakuin Univ.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-A302-10]Dopant concentration dependence of CO2 gas sensitivity in solution-processed La-doped In2O3 thin film transistors

〇(M1)Ryota Kobayashi1, Ayumu Nodera1, Shinya Aikawa1 (1.Kogakuin Univ.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[19p-A302-11]Amorphous Ga2O3 thin films grown on quartz substrates using mist chemical vapor deposition

〇Kazuyuki Uno1 (1.Wakayama Univ.)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[19p-A302-12]Electrical characteristics of gallium oxide in amorphous and various crystal structures

〇(M2)Hiromu Susami1, Tatsuya Yasuoka1, Li Liu2, Toshiyuki Kawaharamura1,2 (1.School of Sys. Eng., Kochi Univ. of Tech., 2.Res. Inst.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-A302-13]Fabrication of SnO thin films using SnO2 target by sputtering in reducing atmosphere

〇(M1)Tubasa Kobayasi1, Takuma Kawaguchi1, Kanta Kibishi1, Shinya Aikawa1 (1.Kogakuin Univ)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[19p-A302-14]Estimation of nitrogen in SnOx thin film deposited under Ar/N2 sputtering

〇(M2)Takuma Kawaguchi1, Tubasa Kobayashi1, Shinya Aikawa1 (1.Kogakuin Univ.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-A302-15]Investigation of proton irradiation resistance of semiconductor CO2 sensors with SnO2 and SnO-SnO2 heterojunction gas sensors.

〇Takuto Maeda1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[19p-A302-16]Effect of Zn Concentration in InZnO TFTs on CO2 Gas Sensing Characteristics

〇(M2)Ayumu Nodera1, Ryota Kobayashi1, Shinri Yamadera1, Kanta Kibishi1, Kobayashi Tsubasa1, Shinya Aikawa1 (1.Kogakuin Univ.)
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