[19p-A302-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-A302-10] Dopant concentration dependence of CO₂ gas sensitivity in solution-processed La-doped In₂O₃ thin film transistors

〇(M1)Ryota Kobayashi¹, Ayumu Nodera¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:

CO2 sensor,In2O3 thin film transistors,La