[19p-A302-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[19p-A302-12] Electrical characteristics of gallium oxide in amorphous and various crystal structures

〇(M2)Hiromu Susami¹, Tatsuya Yasuoka¹, Li Liu², Toshiyuki Kawaharamura^1,2 (1.School of Sys. Eng., Kochi Univ. of Tech., 2.Res. Inst.)

Keywords:

gallium oxide,mist CVD,electrical characteristics

While materials with a wide bandgap such as SiC and GaN are used as power semiconductors, our research group has focused on Ga₂O₃, which has an even larger bandgap. In this study, Ga₂O₃ thin films with amorphous, α and ε structures were prepared using the mist CVD method and their electrical characteristics were evaluated. The relative permittivity and maximum resistance showed different properties for each structure. The electrical characteristics of (Ga_xAl_1-x)₂O₃, an alloy crystal of gallium oxide and aluminium oxide, are also currently being studied, with progress to be reported.