[19p-A302-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[19p-A302-13] Fabrication of SnO thin films using SnO2 target by sputtering in reducing atmosphere

〇(M1)Tubasa Kobayasi¹, Takuma Kawaguchi¹, Kanta Kibishi¹, Shinya Aikawa¹ (1.Kogakuin Univ)

Keywords:

reducing conditions,sputtering,SnO2 traget