[19p-A302-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[19p-A302-6] Effect of deposition pressure and SPC ambient on electrical properties of poly-InO_x:H

〇Satoru Sonezaki¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech, 2.Kochi University of Tech.)

Keywords:

Polycrystalline oxide semiconductor,Indium oxide,Thin film transistor

We reported the metal-semiconductor transition (MST) of hydrogenated polycrystalline indium oxide (poly-InO_x:H) thin films with low-temperature solid phase crystallization (SPC). We examined the effect of deposition pressure and SPC ambient on electrical properties of poly-InO_x:H this time. In this presentation, We will discuss crystallinity, electrical and physical properties and results of thin film transistor (TFT) application.