[19p-A302-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-A302-7] Rapid Thermal Crystallization of H-doped InO_x for Thin Film Transistors

〇XIAOQIAN WANG¹, Yusaku Magari³, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Kochi University of Tech., 3.Hokkaido Univ.)

Keywords:

oxide semiconductor,indium oxide,solid phase crystallization

We reported the metal-semiconductor transition (MST) of hydrogen-doped indium oxide (InO_x:H) films via low-temperature solid phase crystallization (SPC). However, time of the SPC process was set for 1 h in previous researches. In this presentation, the effect of temperature profile of SPC process on crystallinity and electrical properties of the InO_x:H films will be discussed.