[19p-A302-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[19p-A302-9] O₂ plasma treatment on B-doped In₂O₃TFT fabricated at room temperature

〇Shinri Yamadera¹, Kanta Kibishi¹, Ayumu Nodera¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:

TFT,O2 plasma,room temperature