Presentation Information

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-10]Depth-resolved nanoXRD of AlGaN-based UV-B wavelength laser diode

〇Shota Taniguchi¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Motoaki Iwaya³, Hideto Miyake⁴, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.JASRI, 3.Meijo Univ., 4.Grad. Sch. Eng., Mie Univ.)

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Keywords:

nitride semiconductor,AlGaN Laser Diode

AlGaN-based lasers diodes (LDs) are expected to be a coherent light source in the deep UV region, replacing gas and solid-state lasers. In this study, depth-resolved measurements were performed on UV-B wavelength AlGaN LD structures grown on nanopatterned AlN templates using nanobeam X-ray diffraction (nanoXRD) at SPring-8 to extract three-dimensional information inside the crystal, and three-dimensional fault structure of AlGaN LDs on AlN nanopatterns was revealed.

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