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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B101-11]Investigation of n-AlGaN layer for development of 225 nm efficient far-UVC LED

〇Taiga Kirihara^1,2, Yukio Kashima¹, Hiroyuki Yaguchi², Yasushi Iwaisako³, Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ., 3.Nippon Tungsten)

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Keywords:

DUV LED,n-AlGaN layer,225nm

In this study, we report on our investigation of the Al mixed composition ratio of n-AlGaN required for high efficiency of 225 nm UVC-LEDs. 87% or more was determined to be necessary considering the results of measurement of absorption edge wavelengths of n-AlGaN layers with different Al compositions and low resistivity. The results of EL measurements of samples with different Al compositions of the n-AlGaN layer using a 225 nm LED showed that absorption did not occur at 90%, and a peak at 225 nm was obtained.

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