[19p-B101-1~15] 15.4 III-V-group nitride crystals

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B101-5] Efficient Operation of 230nm far-UVC AlGaN based LEDs with p-Side Graded Layer

〇Noritoshi Maeda¹, Yasushi Iwaisako², Hideki Hirayama¹ (1.RIKEN, 2.Nippon Tungsten)

Keywords:

AlGaN,LED,Fa