[19p-B101-1~15] 15.4 III-V-group nitride crystals

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-9] Analysis of alteration layer formed by treating Al_xGa_1-xN with saturated vapor pressure water

〇Eri Matsubara¹, Ryosuke Kondo¹, Toma Nishibayashi¹, Ryoya Yamada¹, Yoshinori Imoto¹, Koki Hattori¹, Sho Iwayama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Shintaro Kobayashi³, Taiji Yamamoto³, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ., 3.Rigaku Corp.)

Keywords:

AlGaN,XRD,UV-B