[19p-B201-1~7] 15.7 Crystal characterization, impurities and crystal defects

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[19p-B201-1] Reduction of SiO₂/Si Interface State Density using Hydrogen Passivation Effects of
Silicon-Hydride and Hydrocarbon Hybrid Ion-Implanted Epitaxial Wafers

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

Keywords:

hydrogen,passivation,point defect