[19p-B201-1~7] 15.7 Crystal characterization, impurities and crystal defects

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-B201-5] Quality of silicon substrate and point defects: 2nd generation
(10) Segregation, micro and macro (average)

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Radiation Research Center, Osaka Metropolitan Univ.)

Keywords:

silicon crystal,segregation coefficient,growth rate

In 2019, silicon crystal replaced the kilogram prototype. In the same year we started the 2nd-generation analysis on the defects in silicon. Previously, the relation between the lattice parameter and carbon concentration was discussed using average values. In the last meeting, we estimated lattice parameter of effectively carbon-free region from the works on the Avogadro crystal. It suggests the further improvement of the accuracy of international system of unit. Previously, the relation between the impurity concentration and growth rate was discussed using average values also. We estimated the temporal dopant concentration and growth rate from the literature. It is shown that the increase of effective distribution coefficient is proportional to the growth rate both in temporal and average values.