Presentation Information
[19p-P01-26]Fabrication of transfer-free graphene FETs on sapphire substrates utilizing the agglomeration phenomenon of the thick Ni pattern with ultra-fine structure
〇Ichiro Kato1, Toshiharu Kubo1, Makoto Miyoshi1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)
Keywords:
graphene,FET,the metal agglomeration phenomenon
We have reported that transfer-free graphene can be formed on insulating substrates by using a metal catalyst aggregation technique. We also fabricated FETs with transfer-free graphene and observed drain current modulations by applied gate voltages. Furthermore, we confirmed that graphene synthesis and device pattern formation can proceed simultaneously by controlling metal aggregation using pre-formed Ni patterns, and that graphene layers with several thicknesses are formed in the vicinity of Ni patterns. In this research, to improve the electrical characteristics of FETs, we have attempted to fabricate thicker Ni patterns with submicron spacing and transfer-free graphene devices, and report the results.