Session Details
[19p-P01-1~75]17 Nanocarbon and Two-Dimensional Materials (Poster)
Tue. Sep 19, 2023 1:30 PM - 3:30 PM JST
Tue. Sep 19, 2023 4:30 AM - 6:30 AM UTC
Tue. Sep 19, 2023 4:30 AM - 6:30 AM UTC
P01 (KJ Hall)
[19p-P01-1]A study on growth mechanism of carbon nanotubes from aerosol carbon sources
〇Yusuke Kurihara1, Eiji Nagasawa1, Hiroaki Komatsu1, Takashi Ikuno1 (1.Tokyo Univ. of Science)
[19p-P01-2]Elucidation of dissociation process of ethanol on Co and Ir catalysts by using in situ DRIFTS measurement
〇Yukiya Koyama1, Takahiro Saida1,2, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Meijo Inst.)
[19p-P01-3]Synthesis of SWCNTs with narrow chirality distribution
〇Shu Matsuoka1, Kamal Sharma2, Takahiro Saida1,2, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Nanomaterial Res. Center)
[19p-P01-4]Production of Carbon Nanotubes (CNTs) and Hydrogen (H2) From Various Plastic Waste Materials Via 2.45 GHz Multi-mode Microwave Irradiation
〇IPutu Abdi Karya1, Kohei Nakagawa1, Yota Kageyama2, Al Jalali Muhammad1, Takayuki Asano2, Fumihiro Nishimura3, Toyohiko Nishiumi2, I Nyoman Sudiana4, yoshinori Tatematsu1, Seitaro Mitsudo1 (1.FIR, Univ. of Fukui, 2.Dept. of Appl. Phys., Univ. of Fukui, 3.HISAC, Univ. of Fukui, 4.Dept. of Phys., Univ. Halu Oleo)
[19p-P01-5]Effect of buffer layers on single-walled carbon nanotube growth
〇(M1)Mao Yotsumoto1, Shu Matsuoka1, Takahiro Saida1,2, Yuichi Haruyama3, Shigeya Naritsuka1,2, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Meijo Nanomaterial Res. Center, 3.Univ. of Hyogo)
[19p-P01-6]Fabrication of Semiconducting Single-Walled Carbon Nanotubes Thin Film via Dialysis
〇Misaki Kurihara1, Tomomi Tanaka1, Yuki Kuwahara2, Takeshi Saito2, Shota Kuwahara1 (1.Toho Univ., 2.AIST)
[19p-P01-7]Fabrication of CNT/RGO hybrid structure using alcohol-catalytic chemical vapor deposition
〇(M2)Hiroki Nagata1, Masanori Hara1, Masamichi Yoshimura1 (1.Toyota Tech. Inst.)
[19p-P01-8]Separation of Graphene Quantum Dots with a Thermoresposive Polymer and Their Optical Properties
〇Kengo Sawayama1, Shota Kuwahara1 (1.Toho Univ.)
[19p-P01-9]Effect of mixed solvent on the separation of semiconducting single-wall carbon nanotubes by polymer-wrapping method
〇(M1)Ritsuki Tanehira1, Shun Matsushita1, Shunjiro Fujii1, Yuki Kuwahara2, Takeshi Saito2 (1.Univ. hyogo, 2.NMRI AIST)
[19p-P01-10]Quantum Yield Improvement of Benzyl-Esterified Graphene Quantum Dots via Size Exclusion Chromatography and Their Application to White-Emitted LED
〇(M1)Natsuno Ishii1, Takumi Nomura1, Shota Kuwahara1 (1.Toho Univ.)
[19p-P01-11]Modulated Blackbody Emitter with an Aligned Carbon Nanotube Film on Silicon Chips
〇(D)Shinichiro Matano1, Natsumi Komatsu2, Shengjie Yu2, Jacques Doumani2, Yui Shimura1, Junichiro Kono2, Hideyuki Maki1,3 (1.Keio Univ., 2.Rice Univ., 3.Center for Spintronics Research Network, Keio Univ.)
[19p-P01-12]Investigation of physical properties of carbon nanotube composite papers for realization of paper actuators
〇Ryodai Toyomasu1, Takahide Oya1 (1.Yokohama National Univ.)
[19p-P01-13]Development of Vertically Aligned Carbon Nanotube-Modified Electrodes Prepared by Multi-Step Synthesis as a Li-Ion Battery Anode
Takashi Banno1, 〇Masanori Hara1, Masamichi Yoshimura1 (1.Toyota Tech. Inst.)
[19p-P01-14]Fabrication of an Inorganic Perovskite Light-Emitting Device using a Semitransparent Electrode of Carbon Nanotubes
〇(M1)Ren Saito1, Manabu Ishizaki1, Masato Kurihara1 (1.Yamagata Univ.)
[19p-P01-15]Fabrication of single-walled carbon-nanotube films stacked with SnO2-coated silver nanowires and their thermal stability
〇(M1)Kounosuke Matsuya1, Ishizaki Manabu1, Kurihara Masato1 (1.Yamagata Univ.)
[19p-P01-16]Performance improvement by n-type doping for semiconducting carbon-nanotube-composite thread composing Peltier thread
〇Masato Yamabe1, Koya Arai2, Takahide Oya1 (1.Yokohama National Univ., 2.Mitsubishi Materials)
[19p-P01-17]Investigation of optimal conditions to improve performance of thermoelectric power generation using carbon nanotube composite paper
〇Yuki Shimamoto1, Koya Arai2, Takahide Oya1 (1.Yokohama National Univ., 2.Mitsubishi Materials)
[19p-P01-18]Examining performance improvement of transpiration type thermoelectric power generation paper based on carbon nanotube composite paper by changing amount of contained materials
〇Yudai Kamekawa1, Koya Arai2, Takahide Oya1 (1.Yokohama National Univ., 2.Mitsubishi Materials)
[19p-P01-19]Performance improvement of paper transistors using carbon-nanotube-composite papers by using vacuum impregnation doping method
〇Kaito Adachihara1, Takahide Oya1 (1.Yokohama National Univ.)
[19p-P01-20]Relation of Temperature Coefficient of Resistance and Diameter of Semiconducting Carbon Nanotubes Separated by ELF Method
〇Toshie Miyamoto1,2, Tomo Tanaka1,2, Takashi Miyazaki1,2, Megumi Kanaori2, Noriyuki Tonouchi1,2, Akinobu Shibuya1,2, Takeshi Saito2, Yuki Kuwahara2, Takeshi Hashimoto3, Ryota Yuge1,2 (1.NEC, 2.AIST, 3.Meijo Nano Carbon)
[19p-P01-21]Chirality Separation and Selection of CNT for NO2 Gas Sensor Application
〇Hirokatsu Ito1, Mariko Murayama1,2, Xinwei Zhao1 (1.Tokyo Univ. of Sci., 2.Toyo Univ. Research Institute of Industrial Technology)
[19p-P01-22]Electrical Transport Properties of Composite Films Consisting of CNT and SnO2 Nanosheet in NH3 Containing Atmosphere
〇Akihiro Tsuruta1, Pil Gyu Choi1, Yoshitake Masuda1 (1.AIST)
[19p-P01-23]Synthesis of graphene on silver foil by chemical vapor deposition using ethanl
〇(B)Hikaru Iwatani1, Ryusuke Tanaka1, Yuta Masuda1, Fumihiko Maeda1 (1.Fukuoka Inst.)
[19p-P01-24]Multilayer graphene formation by solid-phase deposition using patterned Ni catalyst
〇(M2)kouta Ozasa1, Kazuyoshi Ueno1,2 (1.Shibaura Inst. Tech., 2.Int. Res. Cen. Green Electronics)
[19p-P01-25]Improvement of crystallinity and uniformity of multi-layer graphene CVD by split supply of precursor gas
〇Kouta Masukawa1, Kazuyosi Ueno1,2 (1.Shibaura Inst. Tech., 2.SIT Int. Res. Cen. Green Electronics)
[19p-P01-26]Fabrication of transfer-free graphene FETs on sapphire substrates utilizing the agglomeration phenomenon of the thick Ni pattern with ultra-fine structure
〇Ichiro Kato1, Toshiharu Kubo1, Makoto Miyoshi1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)
[19p-P01-27]CVD Growth of Graphene Nanostructure on the Suspended Bilayer h-BN Membrane
〇(M1C)Shun Tonegawa1, Yuta Kawase1, Shinichiro Mouri1 (1.Ritsumeikan Univ.)
[19p-P01-28]Dependence of graphene deposition using HPPS on applied voltage to plasma
〇Yuto Ooishi1, Atsuya Kuwada1, Masanori Shinohara1, Fumihiko Maeda2, Satoshi Tanaka3, Takashi Matsumoto3 (1.Fukuoka Univ., 2.Fukuoka Institute of Technology, 3.Tokyo Electron Technology Solutions)
[19p-P01-29]Real-time XRD analysis of GaN remote epitaxy on sapphire substrates covered with directly grown graphene
〇(M1)Takato Oda1, Yoshikazu Kawai1, Takuo Sasaki2, Shota Yokozawa1, Hiroki Hibino1 (1.Kwansei Gakuin Univ., 2.QST)
[19p-P01-30]First-Principles Study of Epitaxial Graphene Growth Mechanism on SiC — Relation between SC step and crystal nucleation —
〇(M2)Shinya Fukuda1, Hiroyuki Kageshima1 (1.Shimane Univ.)
[19p-P01-31]Correlation between Substrate Temperature and Plasma Electron Density in Graphene Nanowall Growth
〇Shungo Haseba1, Hideo Uchida1, Daisuke Ogawa1 (1.Chuubu Univ.)
[19p-P01-32]Laser thinning of graphene film by photoexcitation effects
〇Koki Nabeshima1, Takahiro Yamana1, Jun'ichi Kanasaki1, Kenji Kisoda2, Chihiro Ito2 (1.Osaka Metropolitan Univ., 2.Wakayama Univ.)
[19p-P01-33]Decision of the number of graphene layers grown on h-BN flake using calibration curve
〇(B)Hayato Watanabe1, Ryosuke Takatsuka1, Yunosuke Miyashita1, Yuki Chigira1, Tomofumi Ukai2, Syunji Kurosu2, Kenji Watanabe3, Takashi Taniguchi3, Kazuki Nisibara4, Takayuki Arie4, Tatsuro Hanajiri1,2, Toru Maekawa1,2, Ryota Negishi1,2 (1.Toyo Univ., 2.Bio-nanoelectronics research center, 3.NIMS, 4.Osaka Metropolitan Univ.)
[19p-P01-34]Preparation of multilayer graphene intercalated with Na
〇Takeru Ayabe1, Mariko Murayama1,2,3, Mikihiro Kato1, Xinwei Zhao1 (1.Tokyo Univ. of Sei, 2.Toyo Univ. Research Institute of Industrial Technology, 3.Toyo Univ.)
[19p-P01-35]Enhancement of Raman Scattered Light from CVD Graphene on Catalytic Substrates by Electrochemical Intercalation
〇Yuki Onuma1, Eri Hashimoto1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
[19p-P01-36]Fabrication of low-resistance 3-layer-stacked graphene using FeCl3 intercalation
〇Kei Kokubu1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
[19p-P01-37]Simple and Rapid Synthesis of Graphite Intercalation Compounds by the Na-Catalyzed Method
〇Akira Iyo1, Hiraku Ogino1, Shigeyuki Ishida1, Hiroshi Eisaki1 (1.AIST)
[19p-P01-38]Reduction of iron phthalocyanine/graphene oxide composites using atmospheric pressure plasma
〇Fuka Hayakawa1, Takahiro Saida1, Takayuki Ohta1 (1.Meijo Univ.)
[19p-P01-39]Fabrication of graphene/nanodiamond layered film by alternate drop assembly and evaluation of optical absorption properties
〇Shogo Ikeda1, Kazuki Toda1, Taiki Inoue1, Yuta Nishina2, Yoshihiro Kobayashi1 (1.Osaka Univ., 2.Okayama Univ.)
[19p-P01-40]Photoelectron spectroscopic studies of photoexcitation effects of graphene thin film
〇Ryuichi Hirosue1, Jun'ichi Kanasaki1, Isamu Yamamoto2, Junpei Azuma2, Kazutoshi Takahashi2 (1.Osaka Metropolitan Univ., 2.Saga Univ.)
[19p-P01-41]Characterization of K-doped few-layer graphene by EBAC measurements
〇Yuki Okigawa1, Tomoaki Masuzawa2, Hideaki Nakajima1, Toshiya Okazaki1, Takatoshi Yamada1 (1.AIST, 2.Shizuoka Univ.)
[19p-P01-42]Characterization of flexible transparent conductive films fabricated using CVD graphene on heat-resistant transparent polyimide films
〇Yamato Shinada1, Makoto Nakamura2, Takeshi Watanabe1, Masayuki Tsutsumi2, Shinji Koh1 (1.Aoyama Gakuin Univ., 2.TOYOBO Co., LTD)
[19p-P01-43]Graphene/PEDOT:PSS Transparent Conductive Films for Solar Cell Applications
〇(M1)Rei Nakaniwa1, Kosuke Sakano1, Itaru Raifuku1, Takeshi Watanabe1, Yasuaki Ishikawa1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
[19p-P01-44]Fabrication and characterization of a transparent heater using 3-layer-stacked graphene
〇(M2)Junya Fukasaku1, Gen Shinozaki1, Takeshi Watanabe1, Koh Shinji1 (1.Aoyama Gakuin Univ.)
[19p-P01-45]Development of CVD graphene transfer using porous mixed cellulose ester supporting layer for electrochemiluminescence analysis applications of graphene electrodes
〇(M2)Mamoru Miyachi1, Ryo Iizuka1, Tatsuya Masuda1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ.)
[19p-P01-46]Multi-channel detection of heavy metal ion with graphene-based sensors
〇Takashi Ikuta1, Tomoya Yoshii1, Kazuki Kikawada1, Fuka Nishitsugu1, Kenzo Maehashi1 (1.Tokyo Univ. of Agri. & Tech.)
[19p-P01-47]Properties of infrared light emitters based on multilayer graphene
〇(M2)Tomoi Yumoto1, Shimura Yui1, Matano Shinichiro1, Nakagawa Kenta1, Maki Hideyuki1,2 (1.Keio Univ., 2.Center for Spintronics Research Network)
[19p-P01-48]Wafer-scaled van der Waals epitaxy of monolayer MoS2 grown by MOCVD
〇Yuki Ono1, Yoshiki Sakuma2, Takashi Matsumoto1 (1.TTS, 2.NIMS)
[19p-P01-49]Effect of additive Na compounds on monolayer MoS2 synthesis using CVD method
〇Yuki Goto1, Akihisa Ogino1 (1.Shizuoka Univ.)
[19p-P01-50]Fabrication and characterizations of heterostacks of CVD-hBN and CVD-MoS2 prepared using functional tapes
〇Mai Kuroki1, Satoru Fukamachi2, Maki Nakatani2, Zongpeng Ma1, Satoshi Honda3, Atsushi Yasui3, Hiroki Ago1,2 (1.Kyushu Univ., 2.Kyushu Univ. GIC, 3.Nitto Denko)
[19p-P01-51]NaCl-assisted growth of MoTe2 multilayers by tellurization of MoO3 thin films
〇Shuto Muranaka1, Yoshiharu Kirihara1, Akira Yasui2, Hiroshi Nohira1, Yusuke Hoshi1 (1.Tokyo City Univ., 2.JASRI)
[19p-P01-52]Bi2Se3 homoepitaxial growth on elementally doped Bi2Se3 using MBE
〇Hiroto Inui2, Souma Takefuta2, Seiya Yokokura1,2, Toshihiro Shimada1,2 (1.Eng Hokkaido Univ., 2.CSE Hokkaido Univ.)
[19p-P01-53]Analysis of initial CVD growth process for hBN using the first-principles calculation and difference in results by vdW methods
〇(M1)Ryo Imamura1, Hiroyuki Kageshima1 (1.Shimane Univ.)
[19p-P01-54]Crystal quality degradation of MoTe2 monolayer fabricated by the gold-mediated exfoliation in atmospheric exposure
〇Rikuto Yamamura1, Kenji Watanabe2, Takashi Taniguchi2, Yusuke Hoshi1 (1.Tokyo City Univ., 2.NIMS)
[19p-P01-55]Establish Au-assisted exfoliation of 2D semiconductor without etching process
〇Daiki Murase1, Keisuke Shinokita1, Yusai Wakafuji2, Momoko Onodera2, Tomoki Machida2, Takashi Taniguchi3, Kenji Watanabe3, Kazunari Matsuda1 (1.Kyoto Univ. IAE, 2.Tokyo Univ. IIS, 3.NIMS)
[19p-P01-56]Identification of crystal orientation of MoS2 and WSe2 using anisotropic wet etching
〇Naoto Horikawa1, Kenji Watanabe2, Takashi Taniguchi2, Yusuke Hoshi1 (1.Tokyo City Univ., 2.NIMS)
[19p-P01-57]Synthesis and optical properties of thin transition metal dichalcogenide nanotubes
〇Yohei Yomogida1, Md. A. Rahman1, Akane Ihara1, Hiroyuki Nishidome1, M. Omoto1, K. Ueji1, Y. Gao2, S Okada2, Y. Miyata1, K. Yanagi1 (1.Tokyo Metro. Univ., 2.Tsukuba Univ.)
[19p-P01-58]Enhancement of MoS2 photoluminescence by using polyoxometalate
〇Takashi Kobayashi1, Tetsuji Dohi1, Naoki Ogiwara2, Sayaka Uchida2, Daisuke Kiriya2 (1.Chuo univ., 2.Univ. Tokyo)
[19p-P01-59]Material dependence of exciton level structure in hBN-encapsulated monolayer transition metal dichalcogenides
〇Shinya Takahashi1, Satoshi Kusaba1, Kenji Watanabe2, Takashi Taniguchi2, Kazuhiro Yanagi3, Riichiro Saito4, Koichiro Tanaka1,5 (1.Dept. Phys., Kyoto Univ., 2.NIMS, 3.Dept. Phys., Tokyo Metro. Univ., 4.Dept. Phys., Tohoku Univ., 5.iCeMS, Kyoto Univ.)
[19p-P01-60]In-situ Xray diffraction during high-temperature and high-pressure treatment of SnS2
〇(M1)Minako Aikawa1, Taijiro Tadokoro1, Seiya Yokokura2, Koutaro Maki1, Akira Miura2, Saori Kawaguchi3, Hirokazu Kadobayashi3, Kenta Oka3, Toshihiro Shimada2 (1.CSE Hokkaido Univ., 2.Eng Hokkaido Univ., 3.JASRI)
[19p-P01-61]Structure and electronic states of MoTe2 on GaAs(111)B
〇Jun Nara1, Akihiro Ohtake1 (1.NIMS)
[19p-P01-62]Effects of High-temperature Heating of Hydrogen Boride Sheets Under High-Hydrogen Partial Pressure
〇(M1)Yukihiro Yasuda1, Kazuho Goto1, Yuki Nakahara2, Reina Utsumi2, Hiroyuki Saitoh2, Satoshi Nakano3, Shin-ichi Ito1, Miwa Hikichi1, Shin-ichi Orimo4, Takahiro Kondo1 (1.Univ. Tsukuba, 2.QST, 3.NIMS, 4.Tohoku Univ.)
[19p-P01-63]Investigation on the Catalytic Performance of Hydrogen Boride for the Conversion of Ethanol and Ethanol Solution
〇Zihao Kang1, Shin-ichi Ito1, Miwa Hikichi1, Takahiro Kondo1 (1.Tsukuba Univ.)
[19p-P01-64]Evaluation of NH3 adsorption properties on hydrogen bolide sheets
〇(M1)Kosei Fukuda1, Shin-ichi Ito2, Miwa Hikichi2, Iwao Matsuda3, Takahiro Kondo2,4 (1.Univ. Tsukuba, 2.TREMS, UNIV. Tsukuba, 3.ISSP, The Univ. Tokyo, 4.AIMR, Tohoku Univ.)
[19p-P01-65]Contact Resistance Measurements of Monolayer MoS2
〇(PC)Puneet Jain1, Shotaro Yotsuya1, Daisuke Kiriya1 (1.Univ. Tokyo)
[19p-P01-66]Unusual resistance in the electron transport behavior in MoS2 contacted with the redox-active molecules
〇Keigo Matsuyama1, Daisuke Kiriya1 (1.Univ. Toyko)
[19p-P01-67]Improvement of the p-type thin film MoS2 TFT by Sulfidation
〇(M1)Kecheng Li1, Kousaku Shimizu1 (1.Nihon Univ)
[19p-P01-68]Etching of silicon assisted by MoS2 nanosheets in HF vapor
〇Kaichi Yamamoto1, Toru Utsunomiya1, Takashi Ichii1, Hiroyuki Sugimura1 (1.Kyoto Univ.)
[19p-P01-69]Large-area synthesis of multilayer hexagonal boron nitride and its application to stacked graphene device arrays
〇Satoru Fukamachi1, Pablo Solis Fernandez1, Kenji Kawahara1, Daichi Tanaka2, Toru Otake2, Yung-Chang Lin3, Kazu Suenaga4, Hiroki Ago1 (1.Kyushu Univ. GIC, 2.Kyushu Univ., 3.AIST, 4.Osaka Univ.)
[19p-P01-70]Control of Id-Vg hysteresis in SiO2/h-BN/MoS2 n-FET by insertion of h-BN with different thickness
〇Mengnan Ke1, Jiaquan Feng1, Daiki Tsuruoka1, Tianshun Xie1, Nobuyuki Aoki1 (1.Chiba Univ.)
[19p-P01-71]Performance enhancement of MoS2 transistors by H2S annealing
〇(B)Koki Hori1,2, Naoya Okada1, Wen-Hsin Chang1, Toshifumi Irisawa1, Yui Tamogami3, Ryusuke Natsui3, Takahiko Endo3, Yasumitsu Miyata3, Atsushi Ogura2 (1.AIST, 2.Meiji Univ., 3.TMU)
[19p-P01-72]Evaluation of charge transfer doping in WSe2-FET by organic/inorganic acceptor deposition for atomic layer deposition
〇Daisuke Horiba1, Kohei Sakanashi1, Mengnan Ke1, Nobuyuki Aoki1 (1.Chiba Univ.)
[19p-P01-73]Fabrication of CTFET inverter based on MoTe2
〇Tianshun Xie1, Mengnan Ke1, Keiji Ueno2, Nobuyuki Aoki1 (1.Chiba Univ, 2.Saitama Univ)
[19p-P01-74]Optical Synaptic Plasticity in 2D WSe2/WOx-based Charge Trap Memory
〇(B)Hitomi Kanaya1, Kaiji Kushihara1, Mitsuru Inada1, Takashi Taniguchi2, Kenji Watanabe2, Keiji Ueno3, Mahito Yamamoto1 (1.Kansai Univ., 2.NIMS, 3.Saitama Univ.)
[19p-P01-75]Spontaneous photocurrent of MoS2/SnS hetero-interface with in-plane polarization
〇Koki Hirabayashi1, Keisuke Shinokita1, Kenji Watanabe2, Takashi Taniguchi2, Kazunari Matsuda1 (1.Institute of Advanced Energy, Kyoto University, 2.National Institute for Materials Science)