Presentation Information
[19p-P01-28]Dependence of graphene deposition using HPPS on applied voltage to plasma
〇Yuto Ooishi1, Atsuya Kuwada1, Masanori Shinohara1, Fumihiko Maeda2, Satoshi Tanaka3, Takashi Matsumoto3 (1.Fukuoka Univ., 2.Fukuoka Institute of Technology, 3.Tokyo Electron Technology Solutions)
Keywords:
graphene,HiPIMS/HPPS,raman
Graphene was directly deposited on Si(100) surface with High Power Pulsed Sputtering(HPPS) plasma. The effect of the supplied voltage on the deposited graphene was investigated. Raman spectroscopic study shows ID/IG decreases with the increases of supplied voltage to the sputtered electrode. It indicates that crystallinity of the deposited graphene improves with the supplied voltage.