Presentation Information
[19p-P01-30]First-Principles Study of Epitaxial Graphene Growth Mechanism on SiC — Relation between SC step and crystal nucleation —
〇(M2)Shinya Fukuda1, Hiroyuki Kageshima1 (1.Shimane Univ.)
Keywords:
graphene,SiC thermal decomposition,first-principles calculation
In this study, we focus on the SiC thermal decomposition method, in which Si evaporates from the surface and the C remaining on the surface forms graphene. This is a method of forming large-area, high-quality graphene crystals. This time, we examine the previous research by Inoue et al., which claims that a step is essential to create six-membered rings of graphene. For the calculation, we calculate the stable structures by adsorbing C2 to C10 on the SC step on the Si face. At C8 and C10, we find chain-like structures extending from the top of the step, and confirm the step growth from the formation energies.