Presentation Information
[19p-P01-59]Material dependence of exciton level structure in hBN-encapsulated monolayer transition metal dichalcogenides
〇Shinya Takahashi1, Satoshi Kusaba1, Kenji Watanabe2, Takashi Taniguchi2, Kazuhiro Yanagi3, Riichiro Saito4, Koichiro Tanaka1,5 (1.Dept. Phys., Kyoto Univ., 2.NIMS, 3.Dept. Phys., Tokyo Metro. Univ., 4.Dept. Phys., Tohoku Univ., 5.iCeMS, Kyoto Univ.)
Keywords:
monolayer semiconductor,exciton
Semiconducting monolayer transition metal dichalcogenides (1L-TMDs) are expected for next-generation optoelectronic devices. No model has, however, been obtained that appropriately describes the level structure of excitons, which are electron-hole pairs dominating the optical properties in 1L-TMDs. In this study, we conducted sum frequency generation spectroscopy on high-quality hBN-encapsulated 1L-TMD samples and succeeded in observing both of s-series and p-series excitons simultaneously. In the presentation, we will discuss the material dependence of the exciton level structure obtained experimentally, with the aid of numerical calculation results.