Presentation Information
[19p-P01-67]Improvement of the p-type thin film MoS2 TFT by Sulfidation
〇(M1)Kecheng Li1, Kousaku Shimizu1 (1.Nihon Univ)
Keywords:
2D material,Molybdenum disulfide,Thin film transistor
It is well known that molybdenum sulfide formed using sputtering causes sulfur loss and degrades device performance. In order to prevent this effect, atomic oxygen treatment was applied to improve the performance of the device. On the one hand, mobility could be improved, but the OFF current increased.Therefore, this time, we improved the performance by sulfidating the MoS2 film for the purpose of lowering the OFF current.