The 84th JSAP Autumn Meeting 2023
Advanced Search

Presentation Information

[19p-P01-70]Control of Id-Vg hysteresis in SiO2/h-BN/MoS2 n-FET by insertion of h-BN with different thickness

〇Mengnan Ke1, Jiaquan Feng1, Daiki Tsuruoka1, Tianshun Xie1, Nobuyuki Aoki1 (1.Chiba Univ.)
PDF DownloadDownload PDF

Keywords:

2D materials,Gate stack,FET

Back to Session information