[20a-A301-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[20a-A301-5] Study of hydrogen annealing effect in tapered TSV holes

〇Hiroyuki Tanaka¹, Hiroshi Tokkunaga², Yoshiyuki Nozawa³, Toshihiro Hayami³, Kazushige Sato^4,5, Shiro Hara^1,5 (1.AIST, 2.MTC, 3.SPPT, 4.SAKAGUCHI, 5.MINIMAL)

Keywords:

Bosch,DRIE,Anneal

Advance packaging technology is attracting attention with the spread of IOT. As an improvement in mounting technology, it is desirable that the TSV deep etching be slightly forward tapered. As a result, the interlayer insulating film and the seed sputtered film can be easily deposited down to the via bottom, but the scallops and vertical stripes generated in the etching process could not be eliminated. For this problem, hydrogen annealing treatment after DRIE deep etching was effective. As a result, it was found that the unevenness inside the via hole was almost flattened in a short time.