Presentation Information
[20a-A302-10]Effects of Postannealing under Atmospheric Pressure on the Properties of Conductive W-Doped In2O3 Films with Thicknesses of Less than 10 nm Deposited on Glass Substrates
〇(PC)Rajasekaran Palani1, Yugo Okada2, Makoto Maehara2, Hisashi Kitami2, Shintaro Kobayashi3, Katsuhiko Inaba3, Hisao Makino1, Kimio Kinoshita2, Tetsuya Yamamoto1 (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)
Keywords:
In2O3,Thin film
To date, we have reported the dominant factors limiting carrier transport and electrical conductivity of amorphous and polycrystalline indium oxide (In2O3)-based conductive thin films. As-deposited amorphous films are deposited on glass substrates without intentionally heating of them by reactive plasma deposition with dc arc discharge. This work focuses on ultra-thin as-deposited amorphous W-doped In2O3 (IWO) conductive films with thicknesses ranging from 3 to 7 nm and 7-nm-thick polycrystalline IWO films obtained after the postannealing. We carried out thermal annealing (200 ℃, 30 min) under atmospheric pressure conditions. From both the temperature dependence of the oxygen species adsorbed on the IWO film surface to be expected and the thickness dependence of the postannealing effects on the structural and electrical properties, we will elucidate the factors governing the electrical properties, and propose the issues to achieve high carrier transport.