The 84th JSAP Autumn Meeting 2023
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-A302-1~10]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 20, 2023 9:00 AM - 11:45 AM JST
Wed. Sep 20, 2023 12:00 AM - 2:45 AM UTC
A302 (KJ Hall)
Yasushi Hirose(Tokyo Metropolitan Univ.), Tetsuya Yamamoto(Kochi Univ. of Tech.)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[20a-A302-1]Deposition of Mg0.57Zn0.43O thin film by reactive cosputtering using Mg and Zn targets and fabrication of piezoelectric devices

〇Haruyuki Endo1, Takayuki Nihei1, Kazuyuki Meguro1, Yasube Kashiwaba2 (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[20a-A302-2]Size dependence of random lasing characteristics in ZnO microparticle

〇(M1)souta yoshino1, Taisei Yamamoto2,3, Toshihiro Nakamura1 (1.Hosei Univ., 2.Osaka Univ., 3.Hakusui Tech Co. Ltd.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[20a-A302-3]Effects of Solvents on NiO Thin Films by Electrostatic Spray Deposition

〇Keito Okubo1, Keisuke Tomono1, Kohta Hori1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[20a-A302-4]Hydrogen treatment of NiO epitaxial layers

〇Takashi Yasuda1, Mizuru Kimura1, Shogo Satomi1, Shinji Nakagomi1 (1.ISU)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[20a-A302-5]Evaluation of Electrical Properties in α-In2O3 Films Grown by Mist CVD Using Various In-based Materials as Source Precursors

〇Takumi Yamamoto1, Akito Taguchi1, Rie Yamada1, Hiroki Nagai1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1 (1.Kogakuin Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[20a-A302-6][Young Scientist Presentation Award Speech] Growth mechanisms of r-GexSn1–xO2 and its coherent film

〇Hitoshi Takane1, Takayoshi Oshima2, Katsuhisa Tanaka1, Kentaro Kaneko3 (1.Kyoto Univ., 2.NIMS, 3.Ritsumeikan Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[20a-A302-7]Low-temperature carrier transport properties of r-GexSn1–xO2

〇(D)Hitoshi Takane1, Itsuhiro Kakeya1, Hirokazu Izumi2, Takeru Wakamatsu1, Yuki Isobe1, Kentaro Kaneko3, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Hyogo Pref. Inst. of Tech., 3.Ritsumeikan Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[20a-A302-8]Hole Trapping Centers in Group III Impurity Doped MgO Films

〇(M1)Toshiki Mitomi1, Wataru Kosaka1, Masaki Matuda1, Kotaro Ogawa1, Kusaka Hiroya1, Yuichi Ota2, Kentaro Kaneko3, Tomohiro Yamaguchi1, Toru Honda1, Shizuo Fujita4, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.TIRI, 3.Ritsumeikan Univ., 4.Kyoto Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[20a-A302-9]Local Structural Analysis of Transparent Conducting Anatase TiO2 Films

〇Tomohito Sudare1, Reiichi Ueda1, Ryota Shimizu1,2, Ryo Nakayama1, Naoomi Yamada3, Taro Hitosugi1,2 (1.Univ. Tokyo, 2.Tokyo Tech., 3.Chubu Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[20a-A302-10]Effects of Postannealing under Atmospheric Pressure on the Properties of Conductive W-Doped In2O3 Films with Thicknesses of Less than 10 nm Deposited on Glass Substrates

〇(PC)Rajasekaran Palani1, Yugo Okada2, Makoto Maehara2, Hisashi Kitami2, Shintaro Kobayashi3, Katsuhiko Inaba3, Hisao Makino1, Kimio Kinoshita2, Tetsuya Yamamoto1 (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)
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