[20a-A302-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[20a-A302-6] [Young Scientist Presentation Award Speech] Growth mechanisms of r-Ge_xSn_1–xO₂ and its coherent film

〇Hitoshi Takane¹, Takayoshi Oshima², Katsuhisa Tanaka¹, Kentaro Kaneko³ (1.Kyoto Univ., 2.NIMS, 3.Ritsumeikan Univ.)

Keywords:

rutile-type oxide,Growth mechanism,Coherent growth

Rutile-type oxide wide-bandgap semiconductors have been intensively studied as a promising candidate for next-generation power-electronic and DUV-optoelectronic devices. In this paper, we report the growth dynamics of r-SnO₂ and r-Ge_xSn_1-xO₂ on r-TiO₂ substrate as well as fabrication of coherent r-Ge_xSn_1-xO₂ film.