[20a-A302-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[20a-A302-7] Low-temperature carrier transport properties of r-Ge_xSn_1–xO₂

〇(D)Hitoshi Takane¹, Itsuhiro Kakeya¹, Hirokazu Izumi², Takeru Wakamatsu¹, Yuki Isobe¹, Kentaro Kaneko³, Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Hyogo Pref. Inst. of Tech., 3.Ritsumeikan Univ.)

Keywords:

carrier transport,rutile-type oxide,hopping conduction

We investigated low-temperature carrier transport properties of r-Ge_xSn_1–xO₂. Resistivity and magnetoresistance measurements reveal that ES VRH is dominant at T≤15K. The origins of magnetoresistance are considered to be the quantum interference and field-induced spin-alignment. In contrast, magnetoresistance measurements at T≥30K suggest a mixture of the Mott VRH and thermally activated band conduction, and transition to almost pure thermally activated band conduction.