[20a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[20a-A304-3] Verification of a New Charge-Based Threshold Voltage Definition

〇KIYOSHI TAKEUCHI¹, MASAHARU KOBAYASHI^2,1, TOSHIRO HIRAMOTO¹ (1.IIS, Univ. Tokyo, 2.d.lab, Univ. Tokyo)

Keywords:

threshold voltage,modeling,MOS diode

Adequacy of a new MOS diode threshold voltage definition, which is applicable to thin film devices including FinFETs, was examined taking into account quantum confinement effects. While the new definition depends on the gate oxide thickness, it was confirmed that reasonable threshold conditions properly corresponding to the shape of a standard charge versus voltage curve can be obtained by using a simple constant oxide thickness correction.