[20a-A304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[20a-A304-4] Effects of quantum confinement on electron velocity overshoot in Si nanosheet FETs

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Yoshihiro Hayashi¹ (1.AIST)

Keywords:

nanosheet,quantum effect,TCAD